| PART |
Description |
Maker |
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P6DPA RJK03P6DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FMXB-2102 |
Fast Recovery Diode with built-in SBD for temperature detection
|
Sanken electric
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的：N沟道MOSFET的硅SBD智能交通：肖特基二极管通用开关器件应
Nch SBD
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| PU7457 PUB4753PU7457 |
PUB4753 (PU7457) - N-Channel Power F-MOS FET (with built-in zener diode)
Power Transistor Arrays (F-MOS FETs)
|
Matsshita / Panasonic
|
| M1FH3 |
Schottky Rectifiers (SBD) / Single (Surface Mount)
SCHOTTKY RECIFIERS (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
